elektronische bauelemente SSD50N03-C 51a , 30v , r ds(on) 9m n-ch enhancement mode power mosfet 13-dec-2017 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 50n03 a c d n o p g e f h k j m b to - 252(d - pack) rohs compliant product a suffix of -c specifies halogen free description the SSD50N03-C is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications. features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available marking package information package mpq leader size to-252 2.5k 13 inch order information absolute maximum ratings parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t c =25c 51 t c =100c 36 t a =25c 12.4 continuous drain current, @v gs =10v 1 t a =70c i d 10.3 a pulsed drain current 2 i dm 110 a single pulse avalanche energy 3 e as 128 mj single pulse avalanche current i as 16 a total power dissipation 4 t c =25c p d 41 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-case 1 r jc 3.05 c/w maximum thermal resistance junction-ambient 1 r ja 62.5 c/w part number type SSD50N03-C lead (pb)-free and halogen-free date code 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 6. 3 6.9 j 2.3 ref. b 4.95 5.53 k 0.89 ref. c 2.1 2.5 m 0.45 1.14 d 0.4 0.9 n 1.55 typ. e 6 7.7 o 0 0.15 f 2.90 ref p 0.58 ref. g 5.4 6.4 h 0.6 1.2
elektronische bauelemente SSD50N03-C 51a , 30v , r ds(on) 9m n-ch enhancement mode power mosfet 13-dec-2017 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a forward transconductance g fs - 38 - s v ds =5v, i d =30a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - 1 drain-source leakage current t j =55c i dss - - 5 a v ds =24v, v gs =0 - - 9 v gs =10v, i d =30a static drain-source on-resistance 4 r ds(on) - - 13.5 m v gs =4.5v, i d =15a total gate charge q g - 12.6 - gate-source charge q gs - 4.2 - gate-drain (miller) change q gd - 5.1 - nc i d =15a v ds =15v v gs =4.5v turn-on delay time t d(on) - 4.6 - rise time t r - 12.2 - turn-off delay time t d(off) - 26.6 - fall time t f - 8 - ns v dd =15v i d =15a v gs =10v r d =3.3 input capacitance c iss - 1317 - output capacitance c oss - 163 - reverse transfer capacitance c rss - 131 - pf v gs =0 v ds =15v f =1.0mhz guaranteed avalanche characteristics single pulse avalanche energy 5 e as 32 - - mj v dd =25v, l=1mh, i as =8a source-drain diode continuous source current 1 i s - - 51 pulsed source current 2 i sm - - 110 a diode forward voltage 4 v sd - - 1.2 v i s =1a, v gs =0 reverse recovery time t rr - 9.2 - ns reverse recovery charge q rr - 2 - nc i f =30a, dl/dt=100a/ s t j =25c notes: 1. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. pulse width limited by maximum junction tempera ture , pulse width Q 300us , duty cycle Q 2%. 3. the eas data shows max. rating . the test condi tion is v dd =25v,v gs =10v,l=1mh,i as =16a. 4. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 5. the min. value is 100% eas tested guarantee.
elektronische bauelemente SSD50N03-C 51a , 30v , r ds(on) 9m n-ch enhancement mode power mosfet 13-dec-2017 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSD50N03-C 51a , 30v , r ds(on) 9m n-ch enhancement mode power mosfet 13-dec-2017 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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